[a collaboration with the J. F. Wager (OSU) group]
Aqueous solution-deposition routes to metal oxide thin films offer an energetically and environmentally favorable alternative to vacuum-based deposition techniques. Recently we have reported an aqueous, all-inorganic route to LaAlO3, a potential gate dielectric material for TFTs. Films prepared via this route are nearly atomically smooth, with densities approaching that of the bulk crystalline phase of the same composition. In collaboration with Prof. John Wager’s group at Oregon State University, these films have been incorporated into TFT devices. Our studies show annealing LaAlO3 films in a reducing atmosphere dramatically improves properties, decreasing TFT turn-on voltages and drain-current hystereses. Work examining the effects of other annealing atmospheres on device performance is currently underway.
Other oxides are also under investigation as gate dielectrics, including lanthanum zirconium oxide and aluminum phosphate oxide.
Relevant Publications
Norelli, K. M.; Plassmeyer, P. N.; Woods, K. N.; Glassy, B. A.; Knutson, C. C.; Beekman, M.; Page, C. J. Influence of composition and processing parameters on the properties of solution-processed aluminum phosphate oxide (AlPO) thin films. Solid State Sciences 2016, 55, 8-12, available on-line February 2, 2016, DOI:10.1016/j.solidstatesciences.2016.01.009.
Plassmeyer, P. N.; Archila, K.; Wager, J. F.; Page, C. J. Lanthanum Aluminum Oxide Thin-Film Dielectrics from Aqueous Solution. ACS Appl. Mater. Interfaces 2015, 7, 1678-1684. DOI: 10.1021/am507271e
Wiedle, R. A.; Warner, M.; Tate, J.; Plassmeyer, P. N.; Page, C. J. Thermal conductivity of amorphous thin-film Al-P-O on Silicon. Thin Solid Films. 2013, 548, 225-229. DOI: 10.1016/j.tsf.2013.09.085